P3506DD Specs and Replacement

Type Designator: P3506DD

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 241 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO252

P3506DD substitution

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P3506DD datasheet

 ..1. Size:496K  unikc
p3506dd.pdf pdf_icon

P3506DD

P3506DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 35m @VGS = -10V -60V -26A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -26 ID Continuous Drain Current TC = 100 C -16 A IDM -100 Pulsed Drain C... See More ⇒

 8.1. Size:373K  unikc
p3506dtf.pdf pdf_icon

P3506DD

P3506DTF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 35m @VGS = -10V -20A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 25 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -10 A IDM -100 Pulsed Drai... See More ⇒

 8.2. Size:525K  unikc
p3506dt.pdf pdf_icon

P3506DD

P3506DT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 35m @VGS = 10V -40A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -40 ID Continuous Drain Current TC = 100 C -25 A IDM -150 Pulsed Drain Cur... See More ⇒

 9.1. Size:290K  niko-sem
p3506ed.pdf pdf_icon

P3506DD

P-Channel Enhancement Mode P3506ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -27A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC = 2... See More ⇒

Detailed specifications: P261ALV, P1810ATX, P1820AD, P1820BD, P1825AD, P1825AT, P2003BDG, P3504BD, 12N60, P3506DT, P3506DTF, P3606BD, P3606HK, P4404EDG, P4404EI, P4404ETG, P4404QV

Keywords - P3506DD MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs