All MOSFET. P3506DD Datasheet

 

P3506DD Datasheet and Replacement


   Type Designator: P3506DD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 241 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252
 

 P3506DD substitution

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P3506DD Datasheet (PDF)

 ..1. Size:496K  unikc
p3506dd.pdf pdf_icon

P3506DD

P3506DDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID35m @VGS = -10V-60V -26ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-26IDContinuous Drain CurrentTC = 100 C-16AIDM-100Pulsed Drain C

 8.1. Size:373K  unikc
p3506dtf.pdf pdf_icon

P3506DD

P3506DTF P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 35m @VGS = -10V -20ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 25TC = 25 C-20IDContinuous Drain CurrentTC = 100 C-10AIDM-100Pulsed Drai

 8.2. Size:525K  unikc
p3506dt.pdf pdf_icon

P3506DD

P3506DTP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 35m @VGS = 10V -40ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-40IDContinuous Drain CurrentTC = 100 C-25AIDM-150Pulsed Drain Cur

 9.1. Size:290K  niko-sem
p3506ed.pdf pdf_icon

P3506DD

P-Channel Enhancement Mode P3506ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -27A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC = 2

Datasheet: P261ALV , P1810ATX , P1820AD , P1820BD , P1825AD , P1825AT , P2003BDG , P3504BD , 4N60 , P3506DT , P3506DTF , P3606BD , P3606HK , P4404EDG , P4404EI , P4404ETG , P4404QV .

History: AON6206 | IRFSL3107PBF | HMS21N60F | SI1013X

Keywords - P3506DD MOSFET datasheet

 P3506DD cross reference
 P3506DD equivalent finder
 P3506DD lookup
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