All MOSFET. IRCZ445 Datasheet

 

IRCZ445 Datasheet and Replacement


   Type Designator: IRCZ445
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

IRCZ445 Datasheet (PDF)

 8.1. Size:132K  international rectifier
 ircz44.pdf pdf_icon

IRCZ445

PD - 9.529BIRCZ44HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.028 Fast Switching Ease of ParallelingID = 50*A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance an

Datasheet: IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , AON7410 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS .

Keywords - IRCZ445 MOSFET datasheet

 IRCZ445 cross reference
 IRCZ445 equivalent finder
 IRCZ445 lookup
 IRCZ445 substitution
 IRCZ445 replacement

 

 
Back to Top

 


 
.