All MOSFET. IRCZ445 Datasheet


IRCZ445 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRCZ445

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO220

IRCZ445 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRCZ445 Datasheet (PDF)

8.1. ircz44.pdf Size:132K _international_rectifier


PD - 9.529BIRCZ44HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.028 Fast Switching Ease of ParallelingID = 50*A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance an

Datasheet: IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , CEP83A3 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS .


Back to Top