All MOSFET. IRCZ445 Datasheet

 

IRCZ445 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRCZ445
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 150 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 10 V
   Maximum Drain Current |Id|: 50 A
   Maximum Junction Temperature (Tj): 150 °C
   Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
   Package: TO220

 IRCZ445 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRCZ445 Datasheet (PDF)

 8.1. Size:132K  international rectifier
 ircz44.pdf

IRCZ445 IRCZ445

PD - 9.529BIRCZ44HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.028 Fast Switching Ease of ParallelingID = 50*A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance an

Datasheet: IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , AON7408 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS .

 

 
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