IRCZ445 Datasheet. Specs and Replacement
Type Designator: IRCZ445 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO220
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IRCZ445 datasheet
ircz44.pdf
PD - 9.529B IRCZ44 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 60V Current Sense 175 C Operating Temperature RDS(on) = 0.028 Fast Switching Ease of Paralleling ID = 50*A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance an... See More ⇒
Detailed specifications: IRCP254, IRCP340, IRCP350, IRCP440, IRCP450, IRCZ14, IRCZ245, IRCZ345, IRLB4132, IRF044, IRF054, IRF1010E, IRF1010EL, IRF1010ES, IRF1010N, IRF1010NL, IRF1010NS
Keywords - IRCZ445 MOSFET specs
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