All MOSFET. IRCZ445 Datasheet

 

IRCZ445 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRCZ445

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO220

IRCZ445 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRCZ445 Datasheet (PDF)

8.1. ircz44.pdf Size:132K _international_rectifier

IRCZ445
IRCZ445

PD - 9.529B IRCZ44 HEXFET® Power MOSFET Dynamic dv/dt Rating VDSS = 60V Current Sense 175°C Operating Temperature RDS(on) = 0.028Ω Fast Switching Ease of Paralleling ID = 50*A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance an

Datasheet: IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , 2N4416 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS .

 

 
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