IRCZ445 Specs and Replacement
Type Designator: IRCZ445
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO220
IRCZ445 substitution
IRCZ445 datasheet
ircz44.pdf
PD - 9.529B IRCZ44 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 60V Current Sense 175 C Operating Temperature RDS(on) = 0.028 Fast Switching Ease of Paralleling ID = 50*A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance an... See More ⇒
Detailed specifications: IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRLB4132 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS .
Keywords - IRCZ445 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
