IRCZ445 Datasheet and Replacement
Type Designator: IRCZ445
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO220
IRCZ445 substitution
IRCZ445 Datasheet (PDF)
ircz44.pdf

PD - 9.529BIRCZ44HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.028 Fast Switching Ease of ParallelingID = 50*A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance an
Datasheet: IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , 5N60 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS .
Keywords - IRCZ445 MOSFET datasheet
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History: FXN40N20C | PN4302



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