All MOSFET. P5003QVT Datasheet

 

P5003QVT MOSFET. Datasheet pdf. Equivalent


   Type Designator: P5003QVT
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: SOP8

 P5003QVT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P5003QVT Datasheet (PDF)

 ..1. Size:780K  unikc
 p5003qvt.pdf

P5003QVT P5003QVT

P5003QVTN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel27.5m @VGS =10V30V 10A N45m @VGS = -10V-30V -7A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 10TA = 25 CP -7IDCon

 7.1. Size:722K  unikc
 p5003qvg.pdf

P5003QVT P5003QVT

P5003QVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel27.5m @VGS = 10V30V 10A N45m @VGS = -10V-30V -7A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 10TA = 25 CP -7IDCo

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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