P2003ED
MOSFET. Datasheet pdf. Equivalent
Type Designator: P2003ED
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 28
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 362
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
TO252
P2003ED
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P2003ED
Datasheet (PDF)
..1. Size:457K unikc
p2003ed.pdf 
P2003EDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V-30V -36ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-36IDContinuous Drain CurrentTC = 100 C-23AIDM-100Pulsed Drain C
8.1. Size:491K unikc
p2003evg.pdf
P2003EVGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9ASOP- 08100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-9IDContinuous Drain CurrentTA = 70 C-7
8.2. Size:378K unikc
p2003ev8.pdf
P2003EV8P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -30V 20m @VGS = -10V -10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-10IDContinuous Drain CurrentTA = 70 C-8AIDM-55Pulsed Drain Cu
8.3. Size:505K unikc
p2003evt.pdf
P2003EVTP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9A100% UIS testedSOP- 08ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-9IDContinuous Drain CurrentTC = 70 C-8AIDM-32
8.4. Size:492K unikc
p2003etf.pdf
P2003ETFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V-30V -26ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-26IDContinuous Drain CurrentTC = 100 C-16AIDM-120Pulsed Drai
8.5. Size:530K unikc
p2003eea.pdf
P2003EEAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -28APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25 TC = 25 C-28 TC = 100 C-18IDContinuous Drain Current2 TA = 25
8.6. Size:485K unikc
p2003eeaa.pdf
P2003EEAAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -25APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20 TC = 25 C-25 TC = 100 C-16IDContinuous Drain Current2 TA = 2
8.7. Size:363K unikc
p2003ev.pdf
P2003EVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-9IDContinuous Drain CurrentTA = 70 C-7AIDM-45Pulsed Drain Curr
8.8. Size:312K niko-sem
p2003evg.pdf
P-Channel Logic Level Enhancement P2003EVGNIKO-SEM Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-FreeD4 :GATE PRODUCT SUMMARY 5,6,7,8 :DRAIN 1,2,3 :SOURCEV(BR)DSS RDS(ON) ID G-30 20m -9A S100% UIS testedABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -30 VGate-Sou
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