P2003ED MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P2003ED
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 42 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 36 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 362 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: TO252
P2003ED Datasheet (PDF)
p2003ed.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003EDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V-30V -36ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-36IDContinuous Drain CurrentTC = 100 C-23AIDM-100Pulsed Drain C
p2003evg.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003EVGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9ASOP- 08100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-9IDContinuous Drain CurrentTA = 70 C-7
p2003ev8.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003EV8P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -30V 20m @VGS = -10V -10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-10IDContinuous Drain CurrentTA = 70 C-8AIDM-55Pulsed Drain Cu
p2003evt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003EVTP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9A100% UIS testedSOP- 08ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-9IDContinuous Drain CurrentTC = 70 C-8AIDM-32
p2003etf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003ETFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V-30V -26ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C-26IDContinuous Drain CurrentTC = 100 C-16AIDM-120Pulsed Drai
p2003eea.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003EEAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -28APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25 TC = 25 C-28 TC = 100 C-18IDContinuous Drain Current2 TA = 25
p2003eeaa.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003EEAAP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -25APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20 TC = 25 C-25 TC = 100 C-16IDContinuous Drain Current2 TA = 2
p2003ev.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P2003EVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = -10V -30V -9ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-9IDContinuous Drain CurrentTA = 70 C-7AIDM-45Pulsed Drain Curr
p2003evg.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
P-Channel Logic Level Enhancement P2003EVGNIKO-SEM Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-FreeD4 :GATE PRODUCT SUMMARY 5,6,7,8 :DRAIN 1,2,3 :SOURCEV(BR)DSS RDS(ON) ID G-30 20m -9A S100% UIS testedABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -30 VGate-Sou
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .