P2103NVG
MOSFET. Datasheet pdf. Equivalent
Type Designator: P2103NVG
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 218
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
SOP8
P2103NVG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P2103NVG
Datasheet (PDF)
..1. Size:796K unikc
p2103nvg.pdf
P2103NVGN- & P- Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) IDN-21m @VGS = 10V30 8AChannelP-34m @VGS = 10V -6A-30ChannelSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)N- P-PARAMETERS/TEST CONDITIONS SYMBOL UNITSChannel ChanneVDSDrain-Source Voltage 30 -30 VVGSGate-Source Voltage 20 20 VTA = 25 C8 -6
9.1. Size:111K samhop
sp2103.pdf
GreenProductSP2103aS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.220 @ VGS=10VSuface Mount Package.100V 2.2A350 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless
9.2. Size:324K unikc
p2103hvg.pdf
P2103HVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 21m @VGS = 10V 8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C8IDContinuous Drain CurrentTA = 70 C6AIDM40Pulsed Drain Current1IA
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.