P2103NVG Specs and Replacement
Type Designator: P2103NVG
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 218 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOP8
P2103NVG substitution
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P2103NVG datasheet
p2103nvg.pdf
P2103NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N- 21m @VGS = 10V 30 8A Channel P- 34m @VGS = 10V -6A -30 Channel SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) N- P- PARAMETERS/TEST CONDITIONS SYMBOL UNITS Channel Channe VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage 20 20 V TA = 25 C 8 -6 ... See More ⇒
sp2103.pdf
Green Product SP2103 a S mHop Microelectronics C orp. Ver 1.3 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 220 @ VGS=10V Suface Mount Package. 100V 2.2A 350 @ VGS=4.5V D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless ... See More ⇒
p2103hvg.pdf
P2103HVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 21m @VGS = 10V 8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 8 ID Continuous Drain Current TA = 70 C 6 A IDM 40 Pulsed Drain Current1 IA... See More ⇒
Detailed specifications: P2003EVT, P2003HV, P2003KV, P2003NV, P2004EV, P2060ZTF, P2060ZTFS, P2103HVG, IRFZ46N, P2202CM, P2202CM6, P2202CV, P2204ND5G, P2206BD, P2402OV, P2502IZG, P8008BD
Keywords - P2103NVG MOSFET specs
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