P8010BD Datasheet. Specs and Replacement

Type Designator: P8010BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO252

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P8010BD datasheet

 ..1. Size:458K  unikc
 p8010bd.pdf pdf_icon

P8010BD

P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9 A IDM 35 Pulsed Drain Current... See More ⇒

 ..2. Size:305K  niko-sem
 p8010bd.pdf pdf_icon

P8010BD

N-Channel Enhancement Mode P8010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 85m 15A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = ... See More ⇒

 8.1. Size:411K  unikc
 p8010bis.pdf pdf_icon

P8010BD

P8010BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 15A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9 A... See More ⇒

 8.2. Size:422K  unikc
 p8010bv.pdf pdf_icon

P8010BD

P8010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.5 ID Continuous Drain Current TA = 70 C 2.8 A IDM 20 Pulsed Drain Curre... See More ⇒

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Detailed specifications: P2402OV, P2502IZG, P8008BD, P8008BDA, P8008BV, P8008BVA, P8008HV, P8008HVA, AO4468, P8010BIS, P8010BV, P8315AD, P8315ATF, P8315BD, P8503BMA, P8503BMG, P3003EDG

Keywords - P8010BD MOSFET specs

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