All MOSFET. P8010BV Datasheet

 

P8010BV MOSFET. Datasheet pdf. Equivalent


   Type Designator: P8010BV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.8 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOP8

 P8010BV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P8010BV Datasheet (PDF)

 ..1. Size:422K  unikc
 p8010bv.pdf

P8010BV P8010BV

P8010BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID85m @VGS = 10V100V 3.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTA = 25 C3.5IDContinuous Drain CurrentTA = 70 C2.8AIDM20Pulsed Drain Curre

 8.1. Size:458K  unikc
 p8010bd.pdf

P8010BV P8010BV

P8010BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID85m @VGS = 10V100V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C15IDContinuous Drain CurrentTC = 100 C9AIDM35Pulsed Drain Current

 8.2. Size:411K  unikc
 p8010bis.pdf

P8010BV P8010BV

P8010BISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID85m @VGS = 10V100V 15A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C15IDContinuous Drain CurrentTC = 100 C9A

 8.3. Size:305K  niko-sem
 p8010bd.pdf

P8010BV P8010BV

N-Channel Enhancement Mode P8010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 85m 15A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 8.4. Size:303K  niko-sem
 p8010bis.pdf

P8010BV P8010BV

N-Channel Enhancement Mode P8010BIS NIKO-SEM Field Effect Transistor TO-251(IS) Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 85m 15A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PD616BA | WM02P06H | NCEP12T15 | ME6968ED-G | SSW1N50A | PK6H2BA

 

 
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