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P8010BV Spec and Replacement


   Type Designator: P8010BV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOP8

 P8010BV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P8010BV Specs

 ..1. Size:422K  unikc
 p8010bv.pdf pdf_icon

P8010BV

P8010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.5 ID Continuous Drain Current TA = 70 C 2.8 A IDM 20 Pulsed Drain Curre... See More ⇒

 8.1. Size:458K  unikc
 p8010bd.pdf pdf_icon

P8010BV

P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9 A IDM 35 Pulsed Drain Current... See More ⇒

 8.2. Size:411K  unikc
 p8010bis.pdf pdf_icon

P8010BV

P8010BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 15A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9 A... See More ⇒

 8.3. Size:305K  niko-sem
 p8010bd.pdf pdf_icon

P8010BV

N-Channel Enhancement Mode P8010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 85m 15A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = ... See More ⇒

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Detailed specifications: P8008BD , P8008BDA , P8008BV , P8008BVA , P8008HV , P8008HVA , P8010BD , P8010BIS , IRFZ44N , P8315AD , P8315ATF , P8315BD , P8503BMA , P8503BMG , P3003EDG , P3004BD , P3004ND5G .

History: P8315AD | BL3N100E-P | IXFN82N60Q3 | HM5N90

Keywords - P8010BV MOSFET specs

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