P8315BD Datasheet. Specs and Replacement

Type Designator: P8315BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm

Package: TO252

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P8315BD datasheet

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 p8315bd.pdf pdf_icon

P8315BD

P8315BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 83m @VGS = 10V 150V 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 30 V TC = 25 C 20 ID Continuous Drain Current TC = 100 C 12 A IDM 50 Pulsed Drain Curren... See More ⇒

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 p8315ad.pdf pdf_icon

P8315BD

P8315AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 83m @VGS = 10V 150V 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 30 V TC = 25 C 20 ID Continuous Drain Current TC = 100 C 12 A IDM 50 Pulsed Drain Curren... See More ⇒

 9.2. Size:458K  unikc
 p8315atf.pdf pdf_icon

P8315BD

P8315ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 83m @VGS = 10V 150V 13.5A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 30 Tc = 25 C 13.5 ID Continuous Drain Current Tc = 100 C 8.5 A IDM 50 Pulsed Drain ... See More ⇒

Detailed specifications: P8008BVA, P8008HV, P8008HVA, P8010BD, P8010BIS, P8010BV, P8315AD, P8315ATF, IRF840, P8503BMA, P8503BMG, P3003EDG, P3004BD, P3004ND5G, P3010BV, P3055LDG, P3055LLG

Keywords - P8315BD MOSFET specs

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