P8503BMA MOSFET. Datasheet pdf. Equivalent
Type Designator: P8503BMA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.2 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT23
P8503BMA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P8503BMA Datasheet (PDF)
p8503bma.pdf
P8503BMAN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID85m @VGS = 10V30V 2.4ASOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C2.4IDContinuous Drain CurrentTA = 100 C1.5AIDM10Pulsed Drain Current1IASAvala
p8503bmg.pdf
P8503BMGN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID85m @VGS = 10V30V 2.4ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C2.4IDContinuous Drain CurrentTA = 100 C1.5AIDM10Pulsed Drain Current1IASAvalanch
p8503bmg.pdf
N-Channel Logic Level Enhancement Mode P8503BMGNIKO-SEM Field Effect Transistor SOT-23Halogen-Free & Lead-FreeDPRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G30V 85m 2.4A 3. SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTA = 25 C 2.4 Continuous Drai
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2SK959
History: 2SK959
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