P8503BMG Datasheet. Specs and Replacement

Type Designator: P8503BMG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT23

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P8503BMG datasheet

 ..1. Size:531K  unikc
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P8503BMG

P8503BMG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 30V 2.4A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 2.4 ID Continuous Drain Current TA = 100 C 1.5 A IDM 10 Pulsed Drain Current1 IAS Avalanch... See More ⇒

 ..2. Size:268K  niko-sem
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P8503BMG

N-Channel Logic Level Enhancement Mode P8503BMG NIKO-SEM Field Effect Transistor SOT-23 Halogen-Free & Lead-Free D PRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G 30V 85m 2.4A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 2.4 Continuous Drai... See More ⇒

 7.1. Size:478K  unikc
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P8503BMG

P8503BMA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 30V 2.4A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 2.4 ID Continuous Drain Current TA = 100 C 1.5 A IDM 10 Pulsed Drain Current1 IAS Avala... See More ⇒

Detailed specifications: P8008HVA, P8010BD, P8010BIS, P8010BV, P8315AD, P8315ATF, P8315BD, P8503BMA, IRF540N, P3003EDG, P3004BD, P3004ND5G, P3010BV, P3055LDG, P3055LLG, P3202CMA, P3202CMG

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