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P3003EDG Spec and Replacement


   Type Designator: P3003EDG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252

 P3003EDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P3003EDG Specs

 ..1. Size:538K  unikc
 p3003edg.pdf pdf_icon

P3003EDG

P3003EDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = -10V -18A -30V TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 V TC= 25 C -18 ID Continuous Drain Current TC= 100 C -12 A IDM -30 Pul... See More ⇒

 9.1. Size:292K  sanyo
 smp3003-dl-e.pdf pdf_icon

P3003EDG

SMP3003 Ordering number ENA1655B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SMP3003 Applications Features ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF (typ.) 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --75... See More ⇒

 9.2. Size:399K  sanyo
 smp3003.pdf pdf_icon

P3003EDG

SMP3003 Ordering number ENA1655A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SMP3003 Applications Features ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --75 V Gat... See More ⇒

 9.3. Size:201K  onsemi
 smp3003-dl-1e smp3003-tl-1e.pdf pdf_icon

P3003EDG

Ordering number ENA1655D SMP3003 P-Channel Power MOSFET http //onsemi.com 75V, 100A, 8.0m , TO-263-2L/TO-263 Features TO-263 ON-resistance RDS(on)1=6.2m (typ.) 4V drive Input capacitance Ciss=13400pF (typ.) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS --75 V Gate to Source... See More ⇒

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Detailed specifications: P8010BD , P8010BIS , P8010BV , P8315AD , P8315ATF , P8315BD , P8503BMA , P8503BMG , IRF540 , P3004BD , P3004ND5G , P3010BV , P3055LDG , P3055LLG , P3202CMA , P3202CMG , P3203CMG .

History: DE375-102N10A

Keywords - P3003EDG MOSFET specs

 P3003EDG cross reference
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