P3003EDG - аналоги, даташиты, параметры транзистора

P3003EDG Datasheet (PDF)

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P3003EDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = -10V -18A -30V TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 V TC= 25 C -18 ID Continuous Drain Current TC= 100 C -12 A IDM -30 Pul

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SMP3003 Ordering number ENA1655B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SMP3003 Applications Features ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF (typ.) 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --75

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SMP3003 Ordering number ENA1655A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SMP3003 Applications Features ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF 4V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --75 V Gat

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Ordering number ENA1655D SMP3003 P-Channel Power MOSFET http //onsemi.com 75V, 100A, 8.0m , TO-263-2L/TO-263 Features TO-263 ON-resistance RDS(on)1=6.2m (typ.) 4V drive Input capacitance Ciss=13400pF (typ.) Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS --75 V Gate to Source