P3003EDG - параметры транзистора MOSFET, его аналоги, datasheet

P3003EDG Datasheet (PDF)

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P3003EDGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = -10V-18A-30VTO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30 VVGSGate-Source Voltage 20 VTC= 25 C-18IDContinuous Drain CurrentTC= 100 C-12 AIDM-30Pul

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SMP3003Ordering number : ENA1655BSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSMP3003ApplicationsFeatures ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --75

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SMP3003Ordering number : ENA1655ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSMP3003ApplicationsFeatures ON-resistance RDS(on)1=6.2m (typ.) Input capacitance Ciss=13400pF 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --75 VGat

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Ordering number : ENA1655DSMP3003P-Channel Power MOSFEThttp://onsemi.com 75V, 100A, 8.0m , TO-263-2L/TO-263FeaturesTO-263 ON-resistance RDS(on)1=6.2m (typ.) 4V drive Input capacitance Ciss=13400pF (typ.)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS --75 VGate to Source