P3004BD Spec and Replacement
Type Designator: P3004BD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252
P3004BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P3004BD Specs
p3004bd.pdf
P3004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = 10V 40V 29A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 29 ID Continuous Drain Current TC = 70 C 23 A IDM 80 Pulsed Drain Current1... See More ⇒
Detailed specifications: P8010BIS , P8010BV , P8315AD , P8315ATF , P8315BD , P8503BMA , P8503BMG , P3003EDG , 50N06 , P3004ND5G , P3010BV , P3055LDG , P3055LLG , P3202CMA , P3202CMG , P3203CMG , P3203EVG .
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