All MOSFET. P3004BD Datasheet

 

P3004BD Datasheet and Replacement


   Type Designator: P3004BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252
 

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P3004BD Datasheet (PDF)

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P3004BD

P3004BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = 10V40V 29ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C29IDContinuous Drain CurrentTC = 70 C23AIDM80Pulsed Drain Current1

 9.1. Size:575K  unikc
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P3004BD

P3004ND5GN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel30m @VGS = 10V40V 12A N55m @VGS = -10V-40V -8.8A PTO-252- 5100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP

Datasheet: P8010BIS , P8010BV , P8315AD , P8315ATF , P8315BD , P8503BMA , P8503BMG , P3003EDG , 50N06 , P3004ND5G , P3010BV , P3055LDG , P3055LLG , P3202CMA , P3202CMG , P3203CMG , P3203EVG .

History: IXFC26N50 | FTK3439KD | 2SJ109 | TPCA8027-H | STU2NK100Z | SSF2610E | IXTT30N50L2

Keywords - P3004BD MOSFET datasheet

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