All MOSFET. IRF1010NS Datasheet

 

IRF1010NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1010NS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 84 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 120 nC

Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm

Package: D2PAK

IRF1010NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1010NS Datasheet (PDF)

0.1. irf1010ns.pdf Size:146K _international_rectifier

IRF1010NS
IRF1010NS

PD - 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

0.2. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

IRF1010NS
IRF1010NS

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

 0.3. irf1010nspbf irf1010nlpbf.pdf Size:292K _infineon

IRF1010NS
IRF1010NS

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

0.4. irf1010ns.pdf Size:252K _inchange_semiconductor

IRF1010NS
IRF1010NS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

Datasheet: IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , CEP83A3 , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 .

 

 
Back to Top