All MOSFET. PZ2806HV Datasheet

 

PZ2806HV MOSFET. Datasheet pdf. Equivalent

Type Designator: PZ2806HV

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 149 pF

Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm

Package: SOP8

PZ2806HV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZ2806HV Datasheet (PDF)

0.1. pz2806hv.pdf Size:333K _unikc

PZ2806HV PZ2806HV

PZ2806HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 32mΩ @VGS = 10V 6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 TA = 25 ° C 6 ID Continuous Drain Current TA = 70 ° C 5 A IDM 30 Pulsed Drain Current1 IA

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top