All MOSFET. PZ5203QV Datasheet

 

PZ5203QV MOSFET. Datasheet pdf. Equivalent

Type Designator: PZ5203QV

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: SOP8

PZ5203QV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZ5203QV Datasheet (PDF)

0.1. pz5203qv.pdf Size:762K _unikc

PZ5203QV
PZ5203QV

PZ5203QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 22mΩ @VGS =10V 30V 7A N 52mΩ @VGS = -10V -30V -5A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N ±20 VGS Gate-Source Voltage P ±20 N 7 TA = 25 ° C P -5 ID Continu

8.1. pz5203ema.pdf Size:752K _unikc

PZ5203QV
PZ5203QV

PZ5203EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51mΩ @VGS = -10V -30V -3A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±16 TA = 25 ° C 3 ID Continuous Drain Current TA = 70 ° A C 2.5 IDM 20 Pulsed Drain Cur

 

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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