PZ5203QV
MOSFET. Datasheet pdf. Equivalent
Type Designator: PZ5203QV
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11.8
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 149
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
SOP8
PZ5203QV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PZ5203QV
Datasheet (PDF)
..1. Size:762K unikc
pz5203qv.pdf
PZ5203QVN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel22m @VGS =10V30V 7A N52m @VGS = -10V-30V -5A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 7TA = 25 CP -5IDContinu
8.1. Size:752K unikc
pz5203ema.pdf
PZ5203EMAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID51m @VGS = -10V-30V -3ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 16TA = 25 C3IDContinuous Drain CurrentTA = 70 AC2.5IDM20Pulsed Drain Cur
8.2. Size:435K niko-sem
pz5203emaa.pdf
P-Channel Logic Level Enhancement PZ5203EMAA NIKO-SEM Mode Field Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 60m -2.8A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.
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