PF610BC
MOSFET. Datasheet pdf. Equivalent
Type Designator: PF610BC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 1.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 33
nS
Cossⓘ -
Output Capacitance: 63
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
SOT89
PF610BC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PF610BC
Datasheet (PDF)
..1. Size:433K unikc
pf610bc.pdf
PF610BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.7 @VGS = 10V100V 1.1ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTA = 25 C1.1IDContinuous Drain CurrentTA = 70 C0.9AIDM5Pulsed Drain Curre
8.1. Size:452K unikc
pf610bl.pdf
PF610BLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.7 @VGS = 10V100V 0.9A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C0.9IDContinuous Drain CurrentTA = 70 C0.5AIDM5.4Pulsed Drain Current1IASAvalanche Current
9.1. Size:482K unikc
pf610hv.pdf
PF610HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.7 @VGS = 10V100V 1ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TA = 25 C1IDContinuous Drain CurrentTA= 70 C0.8AIDM4Pulsed Drain Current
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