PF610HV Datasheet. Specs and Replacement
Type Designator: PF610HV 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: SOP8
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PF610HV datasheet
pf610hv.pdf
PF610HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.7 @VGS = 10V 100V 1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TA = 25 C 1 ID Continuous Drain Current TA= 70 C 0.8 A IDM 4 Pulsed Drain Current... See More ⇒
pf610bl.pdf
PF610BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.7 @VGS = 10V 100V 0.9A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 0.9 ID Continuous Drain Current TA = 70 C 0.5 A IDM 5.4 Pulsed Drain Current1 IAS Avalanche Current ... See More ⇒
pf610bc.pdf
PF610BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.7 @VGS = 10V 100V 1.1A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 1.1 ID Continuous Drain Current TA = 70 C 0.9 A IDM 5 Pulsed Drain Curre... See More ⇒
Detailed specifications: PZ509BA, PZ513BA, PZ5203EMA, PZ5203QV, PZ558EZ, PE6B0SA, PF610BC, PF610BL, 13N50, PI506BZ, PI632BZ, PJ614DA, PC015BD, PC015HV, P2B60AMA, P2E03BK, P4004ED
Keywords - PF610HV MOSFET specs
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