PD1503YVS-A Datasheet. Specs and Replacement

Type Designator: PD1503YVS-A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOP8

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PD1503YVS-A datasheet

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PD1503YVS-A

PD1503YVS-A Dual N- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15.5m @VGS = 10V Q2 30V 9A 18m @VGS = 10V Q1 30V 8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS VDS Drain-Source Voltage 30 30 V VGS Gate-Source Voltage 20 20 V TA = 25 C 9 8 ID Continuous Drain Current TA ... See More ⇒

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PD1503YVS-A

PD1503YVS Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15.8m @VGS = 10V Q2 30V 9A 21.0m @VGS = 10V Q1 30V 8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS 20 20 TA = 25 C 9 8 ID Continuous Drain Current2 TA =... See More ⇒

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 pd1503bv.pdf pdf_icon

PD1503YVS-A

PD1503BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 15m @VGS = 10V 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 12 ID Continuous Drain Current TA = 70 C 9 A IDM 50 Pulsed Drain Current1 IAS Avalanche Current 28 EAS ... See More ⇒

Detailed specifications: P4402FAG, PD0903BEA, PD0903BV, PD0903BVA, PD1203BEA, PD1303YVS, PD1503BV, PD1503YVS, IRF1407, P2703BAG, P2710AD, PM505BA, PM506BA, PM509BA, PM513BA, PM514BA, PM516BA

Keywords - PD1503YVS-A MOSFET specs

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