All MOSFET. PD1503YVS-A Datasheet

 

PD1503YVS-A Datasheet and Replacement


   Type Designator: PD1503YVS-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

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PD1503YVS-A Datasheet (PDF)

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PD1503YVS-A

PD1503YVS-ADual N- Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15.5m @VGS = 10VQ2 30V 9A18m @VGS = 10VQ1 30V 8ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSVDSDrain-Source Voltage 30 30 VVGSGate-Source Voltage 20 20 VTA = 25 C9 8IDContinuous Drain CurrentTA

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PD1503YVS-A

PD1503YVSDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15.8m @VGS = 10VQ2 30V 9A21.0m @VGS = 10VQ1 30V 8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30VGate-Source Voltage VGS 20 20TA = 25 C9 8IDContinuous Drain Current2TA =

 8.1. Size:369K  unikc
 pd1503bv.pdf pdf_icon

PD1503YVS-A

PD1503BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 15m @VGS = 10V 12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C12IDContinuous Drain CurrentTA = 70 C9AIDM50Pulsed Drain Current1IASAvalanche Current 28EAS

Datasheet: P4402FAG , PD0903BEA , PD0903BV , PD0903BVA , PD1203BEA , PD1303YVS , PD1503BV , PD1503YVS , P0903BDG , P2703BAG , P2710AD , PM505BA , PM506BA , PM509BA , PM513BA , PM514BA , PM516BA .

History: STF10N62K3 | AP9560GP-HF

Keywords - PD1503YVS-A MOSFET datasheet

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