PD1503YVS-A
MOSFET. Datasheet pdf. Equivalent
Type Designator: PD1503YVS-A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
SOP8
PD1503YVS-A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PD1503YVS-A
Datasheet (PDF)
..1. Size:758K unikc
pd1503yvs-a.pdf
PD1503YVS-ADual N- Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15.5m @VGS = 10VQ2 30V 9A18m @VGS = 10VQ1 30V 8ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSVDSDrain-Source Voltage 30 30 VVGSGate-Source Voltage 20 20 VTA = 25 C9 8IDContinuous Drain CurrentTA
5.1. Size:730K unikc
pd1503yvs.pdf
PD1503YVSDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15.8m @VGS = 10VQ2 30V 9A21.0m @VGS = 10VQ1 30V 8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30VGate-Source Voltage VGS 20 20TA = 25 C9 8IDContinuous Drain Current2TA =
8.1. Size:369K unikc
pd1503bv.pdf
PD1503BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 15m @VGS = 10V 12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C12IDContinuous Drain CurrentTA = 70 C9AIDM50Pulsed Drain Current1IASAvalanche Current 28EAS
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