PM516BA Datasheet and Replacement
Type Designator: PM516BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 71 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23
PM516BA substitution
PM516BA Datasheet (PDF)
pm516ba.pdf

PM516BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = 4.5V20V 5ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 8 VTA = 25 C5IDContinuous Drain CurrentTA = 70 AC3.5IDM20Pulsed Drain Current1TA = 25 C0.9PDPower
pm516ba.pdf

N-Channel Enhancement Mode PM516BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G2. DRAIN 20V 30m 5A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 8 V TA = 25 C 5 Continuous Drain Curren
pm516bz.pdf

PM516BZN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = 4.5V20V 5ASOT-23ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 8 VTA = 25 C5IDContinuous Drain CurrentTA = 70 AC3.5IDM20Pulsed Drain Current1TA = 25 C0.9PDPower Dis
Datasheet: PD1503YVS-A , P2703BAG , P2710AD , PM505BA , PM506BA , PM509BA , PM513BA , PM514BA , IRF530 , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , PM561BA , PM597BA , PM600BZ .
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