PM516BA Datasheet. Specs and Replacement
Type Designator: PM516BA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 71 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23
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PM516BA datasheet
pm516ba.pdf
PM516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = 4.5V 20V 5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 8 V TA = 25 C 5 ID Continuous Drain Current TA = 70 A C 3.5 IDM 20 Pulsed Drain Current1 TA = 25 C 0.9 PD Power ... See More ⇒
pm516ba.pdf
N-Channel Enhancement Mode PM516BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 2. DRAIN 20V 30m 5A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 8 V TA = 25 C 5 Continuous Drain Curren... See More ⇒
pm516bz.pdf
PM516BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = 4.5V 20V 5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 8 V TA = 25 C 5 ID Continuous Drain Current TA = 70 A C 3.5 IDM 20 Pulsed Drain Current1 TA = 25 C 0.9 PD Power Dis... See More ⇒
Detailed specifications: PD1503YVS-A, P2703BAG, P2710AD, PM505BA, PM506BA, PM509BA, PM513BA, PM514BA, 20N50, PM516BZ, PM523BA, PM550BA, PM557BA, PM560BZ, PM561BA, PM597BA, PM600BZ
Keywords - PM516BA MOSFET specs
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