PM516BZ Datasheet. Specs and Replacement

Type Designator: PM516BZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 71 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

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PM516BZ datasheet

 ..1. Size:761K  unikc
 pm516bz.pdf pdf_icon

PM516BZ

PM516BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = 4.5V 20V 5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 8 V TA = 25 C 5 ID Continuous Drain Current TA = 70 A C 3.5 IDM 20 Pulsed Drain Current1 TA = 25 C 0.9 PD Power Dis... See More ⇒

 8.1. Size:756K  unikc
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PM516BZ

PM516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30m @VGS = 4.5V 20V 5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 8 V TA = 25 C 5 ID Continuous Drain Current TA = 70 A C 3.5 IDM 20 Pulsed Drain Current1 TA = 25 C 0.9 PD Power ... See More ⇒

 8.2. Size:191K  niko-sem
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PM516BZ

N-Channel Enhancement Mode PM516BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 2. DRAIN 20V 30m 5A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 8 V TA = 25 C 5 Continuous Drain Curren... See More ⇒

Detailed specifications: P2703BAG, P2710AD, PM505BA, PM506BA, PM509BA, PM513BA, PM514BA, PM516BA, IRF520, PM523BA, PM550BA, PM557BA, PM560BZ, PM561BA, PM597BA, PM600BZ, PM606BA

Keywords - PM516BZ MOSFET specs

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