PM550BA Datasheet and Replacement
Type Designator: PM550BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT23
PM550BA substitution
PM550BA Datasheet (PDF)
pm550ba.pdf

PM550BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3 @VGS = 10V250V 0.4ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS250VGate-Source Voltage VGS20TA = 25 C0.4IDContinuous Drain CurrentTA = 70 AC0.3IDM1.6Pulsed Drain Curren
Datasheet: PM505BA , PM506BA , PM509BA , PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , IRF2807 , PM557BA , PM560BZ , PM561BA , PM597BA , PM600BZ , PM606BA , P2503BDG , P2503HEA .
History: PHB110NQ08T | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | IXFH18N60P | AM2394NE | NCE60P50G
Keywords - PM550BA MOSFET datasheet
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History: PHB110NQ08T | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | IXFH18N60P | AM2394NE | NCE60P50G



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