All MOSFET. PM606BA Datasheet

 

PM606BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PM606BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23

 PM606BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PM606BA Datasheet (PDF)

 ..1. Size:487K  unikc
 pm606ba.pdf

PM606BA PM606BA

PM606BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID20m @VGS = 10V30V 5ASOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS30VGate-Source Voltage VGS20TA = 25 C5IDContinuous Drain CurrentTA = 70 AC3.7IDM15Pulsed Drain Current1

 ..2. Size:323K  niko-sem
 pm606ba.pdf

PM606BA PM606BA

N-Channel Enhancement Mode Field PM606BA NIKO-SEM Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 30V 20m 6.2A GG. GATE D. DRAIN S. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA =

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History: PM523BA | AM8205 | MTD6N20E | HY3408

 

 
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