PM606BA Spec and Replacement
Type Designator: PM606BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23
PM606BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PM606BA Specs
pm606ba.pdf
PM606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA = 25 C 5 ID Continuous Drain Current TA = 70 A C 3.7 IDM 15 Pulsed Drain Current1... See More ⇒
pm606ba.pdf
N-Channel Enhancement Mode Field PM606BA NIKO-SEM Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 30V 20m 6.2A G G. GATE D. DRAIN S. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA =... See More ⇒
Detailed specifications: PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ , PM561BA , PM597BA , PM600BZ , AO3400A , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG , P2504EDG , P2504EI , P2804BDG .
History: IRFR111 | IXFR26N100P
Keywords - PM606BA MOSFET specs
PM606BA cross reference
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History: IRFR111 | IXFR26N100P
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