PM606BA Datasheet. Specs and Replacement
Type Designator: PM606BA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23
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PM606BA datasheet
pm606ba.pdf
PM606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA = 25 C 5 ID Continuous Drain Current TA = 70 A C 3.7 IDM 15 Pulsed Drain Current1... See More ⇒
pm606ba.pdf
N-Channel Enhancement Mode Field PM606BA NIKO-SEM Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 30V 20m 6.2A G G. GATE D. DRAIN S. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA =... See More ⇒
Detailed specifications: PM516BZ, PM523BA, PM550BA, PM557BA, PM560BZ, PM561BA, PM597BA, PM600BZ, AO3400A, P2503BDG, P2503HEA, P2503HVG, P2503NVG, P2504BDG, P2504EDG, P2504EI, P2804BDG
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