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P2806BD Spec and Replacement


   Type Designator: P2806BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO252

 P2806BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P2806BD Specs

 ..1. Size:664K  unikc
 p2806bd.pdf pdf_icon

P2806BD

P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 60V 30A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 30 ID Continuous Drain Current TC = 100 C 19 A IDM 100 Pulsed Drain Current1 IAS Avalanche Current 30 EA... See More ⇒

 8.1. Size:478K  unikc
 p2806bv.pdf pdf_icon

P2806BD

P2806BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 60V 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V VGS Gate-Source Voltage 20 TA = 25 C 7 ID Continuous Drain Current TA = 70 C 5 A IDM 35 Pulsed Drain Current1 IAS ... See More ⇒

 9.1. Size:380K  unikc
 p2806atf.pdf pdf_icon

P2806BD

P2806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 27A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 27 ID Continuous Drain Current TC = 100 C 17 A IDM 105 Pulsed Drain Current1 IAS Avalanche Current 29 E... See More ⇒

 9.2. Size:345K  unikc
 p2806at.pdf pdf_icon

P2806BD

P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 34 ID Continuous Drain Current TC = 100 C 21 A IDM 110 Pulsed Drain Current1 IAS Avalanche Current 29 EAS... See More ⇒

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Detailed specifications: P2804BDG , P2804BI , P2804BVG , P2804HVG , P2804ND5G , P2804NVG , P2806AT , P2806ATF , AOD4184A , P2806BV , P2806HV , P5102FM , P5102FM6 , P5102FMA , P5102FMNV , P5103EAG , P5103EMA .

History: CJQ4435

Keywords - P2806BD MOSFET specs

 P2806BD cross reference
 P2806BD equivalent finder
 P2806BD lookup
 P2806BD substitution
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