Справочник MOSFET. P2806BD

 

P2806BD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P2806BD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 168 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO252

 Аналог (замена) для P2806BD

 

 

P2806BD Datasheet (PDF)

 ..1. Size:664K  unikc
 p2806bd.pdf

P2806BD P2806BD

P2806BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V60V 30ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C30IDContinuous Drain CurrentTC = 100 C19AIDM100Pulsed Drain Current1IASAvalanche Current 30EA

 8.1. Size:478K  unikc
 p2806bv.pdf

P2806BD P2806BD

P2806BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V60V 7ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 60VVGSGate-Source Voltage 20TA = 25 C7IDContinuous Drain CurrentTA = 70 C5AIDM35Pulsed Drain Current1IAS

 9.1. Size:380K  unikc
 p2806atf.pdf

P2806BD P2806BD

P2806ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 30m @VGS = 10V 27ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C27IDContinuous Drain CurrentTC = 100 C17AIDM105Pulsed Drain Current1IASAvalanche Current 29E

 9.2. Size:345K  unikc
 p2806at.pdf

P2806BD P2806BD

P2806ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 30m @VGS = 10V 34ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C34IDContinuous Drain CurrentTC = 100 C21AIDM110Pulsed Drain Current1IASAvalanche Current 29EAS

 9.3. Size:340K  unikc
 p2806hv.pdf

P2806BD P2806BD

P2806HVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 28m @VGS = 10V 6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TA = 25 C6IDContinuous Drain CurrentTA = 70 C5AIDM30Pulsed Drain Current1IAS

 9.4. Size:828K  cn vbsemi
 p2806hv.pdf

P2806BD P2806BD

P2806HVwww.VBsemi.comDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

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