All MOSFET. P5103EMA Datasheet

 

P5103EMA MOSFET. Datasheet pdf. Equivalent


   Type Designator: P5103EMA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.3 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.051 Ohm
   Package: SOT23

 P5103EMA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P5103EMA Datasheet (PDF)

 ..1. Size:430K  unikc
 p5103ema.pdf

P5103EMA P5103EMA

P5103EMAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID51m @VGS = -10V-30V -3.8ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-3.8IDContinuous Drain CurrentTA = 70 AC-3IDM-20Pulsed Drain

 7.1. Size:755K  unikc
 p5103emg.pdf

P5103EMA P5103EMA

P5103EMGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID51m @VGS = -10V-30V -3.8ASOT-23ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-3.8IDContinuous Drain CurrentTA = 70 AC-3IDM-20Pul

 8.1. Size:486K  unikc
 p5103eag.pdf

P5103EMA P5103EMA

P5103EAGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID51m @VGS = -10V-30V -5ATSOP- 06ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VGSGate-Source Voltage 20 VDrain-Gate Voltage (RGS=20K VDG-30TA = 25 C-5IDContinuous Drain CurrentTA = 7

 9.1. Size:302K  cystek
 mtp5103j3.pdf

P5103EMA P5103EMA

Spec. No. : C400J3 Issued Date : 2012.02.07 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30VMTP5103J3 ID -23A35m(typ.)RDSON@VGS=-10V, ID=-10A 57m(typ.)Features RDSON@VGS=-4.5V, ID=-5A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package

 9.2. Size:359K  cystek
 mtp5103n3.pdf

P5103EMA P5103EMA

Spec. No. : C400N3 CYStech Electronics Corp. Issued Date : 2011.11.28 Revised Date : 2017.06.23 Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -30VID @TA=25C , VGS=-10V -4.5A MTP5103N3 41m VGS=-10V, ID=-4.5A RDSON(TYP) 60m VGS=-4.5V, ID=-3.5A Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technolog

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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