P5504EVG Datasheet. Specs and Replacement
Type Designator: P5504EVG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.7 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOP8
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P5504EVG substitution
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P5504EVG datasheet
p5504evg.pdf
P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 55m @VGS = -10V -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 25 TA = 25 C -6 ID Continuous Drain Current TA = 70 A C -4.8 IDM -20 Pulsed Drain Cur... See More ⇒
p5504edg.pdf
P5504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS = -10V -40V -21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -21 ID Continuous Drain Current TC = 100 A C -13 IDM -39 Pulsed Drain Cu... See More ⇒
p5504edg.pdf
P5504EDG www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl... See More ⇒
Detailed specifications: P5102FM6, P5102FMA, P5102FMNV, P5103EAG, P5103EMA, P5103EMG, P5503QV, P5504EDG, IRF540, P5506BDG, P5506BVG, P5506HVG, P5506NVG, P2803BMG, P2803HVG, P2803NVG, P2904BD
Keywords - P5504EVG MOSFET specs
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History: P5504EDG | IRFZ44ZPBF | IRFZ44PBF | AUIRFZ24NL
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