P2803HVG Datasheet and Replacement

P2803HVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 27.5m @VGS = 10V 6.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C6.5IDContinuous Drain Current2TA = 70 C5AIDM30Pulsed Drain Curre

P2803NVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel27.5m @VGS = 10V30V 7A N34m @VGS = -10V-30V -6A PSOP- 08ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source VoltageP -30VN 20VGSGate-Source VoltageP 20N 7TC = 25 CP -6IDCo

P2803BMGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 28m @VGS = 10V 6ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS20 VTA = 25 C6IDContinuous Drain CurrentTA = 70 C4AIDM30Pulsed Drain Current1IASAvalanche Current 21L = 0.

150A30VKNX2803AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@ V =10VDS(on) GS Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely l

150A30VKNX2803AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@V =10VDS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely low on-resistance.Addition