P2904BD Datasheet. Specs and Replacement
Type Designator: P2904BD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 157 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: TO252
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P2904BD datasheet
p2904bd.pdf
P2904BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 29m @VGS = 10V 40V 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TA= 25 C 25 ID Continuous Drain Current TA= 70 C 20 A IDM 75 Pulsed Drain ... See More ⇒
ap2904ec4.pdf
AP2904EC4 Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 38m Protection Diode Built-in IS 6A RoHS Compliant & Halogen-Free Description AP2904 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒
Detailed specifications: P5504EVG, P5506BDG, P5506BVG, P5506HVG, P5506NVG, P2803BMG, P2803HVG, P2803NVG, IRF640N, P5010AV, P5015ATF, P5015BD, P5015BTF, P50N03LTG, P5803NAG, P5806NVG, PB521BX
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