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P2904BD Spec and Replacement


   Type Designator: P2904BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO252

 P2904BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P2904BD Specs

 ..1. Size:523K  unikc
 p2904bd.pdf pdf_icon

P2904BD

P2904BD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 29m @VGS = 10V 40V 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TA= 25 C 25 ID Continuous Drain Current TA= 70 C 20 A IDM 75 Pulsed Drain ... See More ⇒

 9.1. Size:91K  ape
 ap2904ec4.pdf pdf_icon

P2904BD

AP2904EC4 Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 38m Protection Diode Built-in IS 6A RoHS Compliant & Halogen-Free Description AP2904 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po... See More ⇒

Detailed specifications: P5504EVG , P5506BDG , P5506BVG , P5506HVG , P5506NVG , P2803BMG , P2803HVG , P2803NVG , IRF640N , P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX .

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