All MOSFET. P2904BD Datasheet

 

P2904BD Datasheet and Replacement


   Type Designator: P2904BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO252
 

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P2904BD Datasheet (PDF)

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P2904BD

P2904BDN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID29m @VGS = 10V40V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TA= 25 C25IDContinuous Drain CurrentTA= 70 C20AIDM75Pulsed Drain

 9.1. Size:91K  ape
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P2904BD

AP2904EC4Halogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Capable of 2.5V Gate Drive VSSS 24V Ultra-small Package Outline RSS(ON) 38m Protection Diode Built-in IS 6A RoHS Compliant & Halogen-FreeDescriptionAP2904 series are from Advanced Power innovated designand silicon process technology to achieve the lowest po

Datasheet: P5504EVG , P5506BDG , P5506BVG , P5506HVG , P5506NVG , P2803BMG , P2803HVG , P2803NVG , IRF630 , P5010AV , P5015ATF , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX .

History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I

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