All MOSFET. PV510BA Datasheet

 

PV510BA Datasheet and Replacement


   Type Designator: PV510BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SOP8
 

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PV510BA Datasheet (PDF)

 ..1. Size:461K  unikc
 pv510ba.pdf pdf_icon

PV510BA

PV510BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4m @VGS = 10V30V 22ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTA = 25 C22IDContinuous Drain CurrentTA = 70 C17AIDM100Pulsed Drain Current1

 ..2. Size:352K  niko-sem
 pv510ba.pdf pdf_icon

PV510BA

PV510BA N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 4m 22A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA = 25

Datasheet: P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , PV507BA , STP75NF75 , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA .

History: BRD1N60

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