PV510BA PDF and Equivalents Search

 

PV510BA Specs and Replacement


   Type Designator: PV510BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SOP8
 

 PV510BA substitution

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PV510BA datasheet

 ..1. Size:461K  unikc
pv510ba.pdf pdf_icon

PV510BA

PV510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4m @VGS = 10V 30V 22A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 22 ID Continuous Drain Current TA = 70 C 17 A IDM 100 Pulsed Drain Current1 ... See More ⇒

 ..2. Size:352K  niko-sem
pv510ba.pdf pdf_icon

PV510BA

PV510BA N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 30V 4m 22A G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA = 25 ... See More ⇒

Detailed specifications: P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , PV507BA , 7N65 , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA .

Keywords - PV510BA MOSFET specs

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