PV510BA Specs and Replacement
Type Designator: PV510BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SOP8
PV510BA substitution
PV510BA datasheet
pv510ba.pdf
PV510BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4m @VGS = 10V 30V 22A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 22 ID Continuous Drain Current TA = 70 C 17 A IDM 100 Pulsed Drain Current1 ... See More ⇒
pv510ba.pdf
PV510BA N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 30V 4m 22A G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA = 25 ... See More ⇒
Detailed specifications: P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , PV507BA , 7N65 , PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA .
Keywords - PV510BA MOSFET specs
PV510BA cross reference
PV510BA equivalent finder
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PV510BA substitution
PV510BA replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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