PV628BA Datasheet. Specs and Replacement
Type Designator: PV628BA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 83 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0143 Ohm
Package: SOP8
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PV628BA substitution
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PV628BA datasheet
pv628ba.pdf
PV628BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14.3m @VGS = 10V 30V 8.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 8.4 ID Continuous Drain Current TA = 70 C 6.7 A IDM 33 Pulsed Drain Curren... See More ⇒
pv628da.pdf
PV628DA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = 10V 30V 8.1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 8.1 ID Continuous Drain Current TA = 70 C 6.5 A IDM 31 Pulsed Drain Current1... See More ⇒
pv628da.pdf
PV628DA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 14m 8.1A G GATE D DRAIN S SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA = 25 ... See More ⇒
Detailed specifications: PV516DA, PV537BA, PV548BA, PV551BA, PV600BA, PV601CA, PV604CA, PV606BA, IRFP064N, PV628DA, PV650BA, P6002OAG, P6003QEA, P6004ED, P6006BD, P6006BI, P6006HV
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History: HGB049N10S | NTR4503NT1
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