All MOSFET. PV628BA Datasheet

 

PV628BA MOSFET. Datasheet pdf. Equivalent

Type Designator: PV628BA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 16 nS

Drain-Source Capacitance (Cd): 83 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0143 Ohm

Package: SOP8

PV628BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PV628BA Datasheet (PDF)

0.1. pv628ba.pdf Size:464K _unikc

PV628BA
PV628BA

PV628BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14.3mΩ @VGS = 10V 30V 8.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TA = 25 ° C 8.4 ID Continuous Drain Current TA = 70 ° C 6.7 A IDM 33 Pulsed Drain Curren

9.1. pv628da.pdf Size:472K _unikc

PV628BA
PV628BA

PV628DA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14mΩ @VGS = 10V 30V 8.1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TA = 25 ° C 8.1 ID Continuous Drain Current TA = 70 ° C 6.5 A IDM 31 Pulsed Drain Current1

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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