PV628BA Datasheet and Replacement
Type Designator: PV628BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 83 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0143 Ohm
Package: SOP8
PV628BA substitution
PV628BA Datasheet (PDF)
pv628ba.pdf

PV628BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14.3m @VGS = 10V30V 8.4ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C8.4IDContinuous Drain CurrentTA = 70 C6.7AIDM33Pulsed Drain Curren
pv628da.pdf

PV628DAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 10V30V 8.1ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C8.1IDContinuous Drain CurrentTA = 70 C6.5AIDM31Pulsed Drain Current1
pv628da.pdf

PV628DA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 14m 8.1A G: GATE D: DRAIN S: SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V TA = 25
Datasheet: PV516DA , PV537BA , PV548BA , PV551BA , PV600BA , PV601CA , PV604CA , PV606BA , IRF4905 , PV628DA , PV650BA , P6002OAG , P6003QEA , P6004ED , P6006BD , P6006BI , P6006HV .
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