P6006BI Datasheet. Specs and Replacement

Type Designator: P6006BI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 7.6 nC

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO251

  📄📄 Copy 

P6006BI substitution

- MOSFET ⓘ Cross-Reference Search

 

P6006BI datasheet

 ..1. Size:329K  unikc
p6006bi.pdf pdf_icon

P6006BI

P6006BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 65m @VGS = 10V 18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 18 ID Continuous Drain Current TC = 100 C 11.8 A IDM 34 Pulsed Drain Current1... See More ⇒

 8.1. Size:493K  unikc
p6006bd.pdf pdf_icon

P6006BI

P6006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 60V 21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 21 ID Continuous Drain Current TC = 100 A C 17 IDM 85 Pulsed Drain Current1 ... See More ⇒

 8.2. Size:371K  niko-sem
p6006bd.pdf pdf_icon

P6006BI

P6006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 60m @VGS = 10V 21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 21 ID Continuous Drain Current TC = 100 A C 17 IDM 85 Pulsed Drain Current1 T... See More ⇒

 9.1. Size:466K  unikc
p6006hv.pdf pdf_icon

P6006BI

P6006HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 60V 4.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TA = 25 C 4.5 ID Continuous Drain Current TA= 70 C 3.2 A IDM 20 Pulsed Drain Cur... See More ⇒

Detailed specifications: PV606BA, PV628BA, PV628DA, PV650BA, P6002OAG, P6003QEA, P6004ED, P6006BD, SKD502T, P6006HV, P6010DDG, P6010DTFG, P6010DTG, P6015AD, P6015AT, P6015AV, P6015CDG

Keywords - P6006BI MOSFET specs

 P6006BI cross reference

 P6006BI equivalent finder

 P6006BI pdf lookup

 P6006BI substitution

 P6006BI replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs