P6006BI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P6006BI
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 37 ns
Выходная емкость (Cd): 48 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.065 Ohm
Тип корпуса: TO251
P6006BI Datasheet (PDF)
p6006bi.pdf
P6006BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 65m @VGS = 10V 18ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C18IDContinuous Drain CurrentTC = 100 C11.8AIDM34Pulsed Drain Current1
p6006bd.pdf
P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1
p6006bd.pdf
P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 60m @VGS = 10V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1T
p6006hv.pdf
P6006HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 4.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTA = 25 C4.5IDContinuous Drain CurrentTA= 70 C3.2AIDM20Pulsed Drain Cur
mxp6006ct.pdf
MXP6006CT Preliminary Datasheet 60V N-Channel MOSFET Applications: Power Supply VDSS RDS(ON) (Max) IDa DC-DC Converters 60 V 6.0 m 116 AFeatures: LeadFree Low RDS(ON) to Minimize Conductive Loss Low Gate Change for Fast Switching Application Optimized BVDSS Capability Ordering Information Part Number Package Brand MXP6006CT TO220 MXP Absolute Maximu
mxp6006dt-df.pdf
MXP6006DT, MXP6006DF Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPTO-263TO-263 MXPM
mxp6006dt.pdf
MXP6006DT Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP6006DT TO-220 MXPAbsolute Maximum Ratings TC=25
mxp6006dp.pdf
MXP6006DP Datasheet60V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 60V 6m 115AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrderingPark Number Package BrandMXP6006DP Power SO-8 MXPAbsolute Maximum Ratings TC=25unless
Другие MOSFET... PV606BA , PV628BA , PV628DA , PV650BA , P6002OAG , P6003QEA , P6004ED , P6006BD , IRF9540 , P6006HV , P6010DDG , P6010DTFG , P6010DTG , P6015AD , P6015AT , P6015AV , P6015CDG .
History: LNH06R200
History: LNH06R200
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C