All MOSFET. P6010DTFG Datasheet

 

P6010DTFG Datasheet and Replacement


   Type Designator: P6010DTFG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 324 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220F

 P6010DTFG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P6010DTFG Datasheet (PDF)

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P6010DTFG

P6010DTFG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -24A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -24 ID Continuous Drain Current TC = 100 C -15 A IDM -96 Pulsed D... See More ⇒

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P6010DTFG

P6010DTG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -27A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -27 ID Continuous Drain Current TC = 100 C -17 A IDM -100 Pulsed Dra... See More ⇒

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P6010DTFG

P6010DDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -12 A IDM -60 ... See More ⇒

 8.2. Size:414K  niko-sem
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P6010DTFG

P6010DDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -12 A IDM -60 ... See More ⇒

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Datasheet: PV650BA , P6002OAG , P6003QEA , P6004ED , P6006BD , P6006BI , P6006HV , P6010DDG , AON7410 , P6010DTG , P6015AD , P6015AT , P6015AV , P6015CDG , P6015CSG , P6402FMG , P6403FMG .

History: P6010DDG

Keywords - P6010DTFG MOSFET datasheet

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