P6010DTFG Datasheet. Specs and Replacement

Type Designator: P6010DTFG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 98 nC

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 324 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO220F

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P6010DTFG datasheet

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P6010DTFG

P6010DTFG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -24A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -24 ID Continuous Drain Current TC = 100 C -15 A IDM -96 Pulsed D... See More ⇒

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P6010DTFG

P6010DTG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -27A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -27 ID Continuous Drain Current TC = 100 C -17 A IDM -100 Pulsed Dra... See More ⇒

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P6010DTFG

P6010DDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -12 A IDM -60 ... See More ⇒

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P6010DTFG

P6010DDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -12 A IDM -60 ... See More ⇒

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Detailed specifications: PV650BA, P6002OAG, P6003QEA, P6004ED, P6006BD, P6006BI, P6006HV, P6010DDG, AON7410, P6010DTG, P6015AD, P6015AT, P6015AV, P6015CDG, P6015CSG, P6402FMG, P6403FMG

Keywords - P6010DTFG MOSFET specs

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