P6010DTG MOSFET Datasheet: P-Ch, 100V, 27A. Full specification with pinout and replacement list

P6010DTG Specs and Replacement

   Type Designator: P6010DTG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO220

P6010DTG substitution

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P6010DTG datasheet

..1. Size:514K unikc
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P6010DTG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -27A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -27 ID Continuous Drain Current TC = 100 C -17 A IDM -100 Pulsed Dra... See More ⇒

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P6010DTFG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -24A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -24 ID Continuous Drain Current TC = 100 C -15 A IDM -96 Pulsed D... See More ⇒

8.1. Size:414K unikc
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P6010DDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = -10V -100V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -12 A IDM -60 ... See More ⇒

8.2. Size:414K niko-sem
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