P6010DTG MOSFET. Datasheet pdf. Equivalent
Type Designator: P6010DTG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 27 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 87 nS
Drain-Source Capacitance (Cd): 320 pF
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: TO220
P6010DTG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P6010DTG Datasheet (PDF)
1.1. p6010dtg.pdf 
Size:514K _unikc
P6010DTG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60mΩ @VGS = -10V -100V -27A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 TC = 25 ° C -27 ID Continuous Drain Current TC = 100 ° C -17 A IDM -100 Pulsed Dra
3.1. p6010dtfg.pdf Size:386K _unikc
P6010DTFG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60mΩ @VGS = -10V -100V -24A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 TC = 25 ° C -24 ID Continuous Drain Current TC = 100 ° C -15 A IDM -96 Pulsed D
4.1. p6010ddg.pdf Size:414K _unikc
P6010DDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60mΩ @VGS = -10V -100V -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 TC = 25 ° C -20 ID Continuous Drain Current TC = 100 ° C -12 A IDM -60
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
