All MOSFET. P6803HVG Datasheet

 

P6803HVG Datasheet and Replacement


   Type Designator: P6803HVG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOP8
 

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P6803HVG Datasheet (PDF)

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P6803HVG

P6803HVGDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID58m @VGS = 10V30V 4.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C4.5IDContinuous Drain CurrentTA= 70 C3.6 AIDM20Pulsed Drain Curr

Datasheet: P6015AV , P6015CDG , P6015CSG , P6402FMG , P6403FMG , P6503FM , P6503FM6 , P6503FMA , IRFZ24N , PK610SA , PK612DZ , PK615BM6 , PK615BMA , PK616BA , PK618BA , PK626BA , PK632BA .

History: 2SK2388 | SLD65R950S2 | TF2341 | TPU65R600M | 6N60KG-TMS2-T | STD9HN65M2 | BUZ61

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