P6803HVG Datasheet. Specs and Replacement

Type Designator: P6803HVG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOP8

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P6803HVG datasheet

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P6803HVG

P6803HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 58m @VGS = 10V 30V 4.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 4.5 ID Continuous Drain Current TA= 70 C 3.6 A IDM 20 Pulsed Drain Curr... See More ⇒

Detailed specifications: P6015AV, P6015CDG, P6015CSG, P6402FMG, P6403FMG, P6503FM, P6503FM6, P6503FMA, TK10A60D, PK610SA, PK612DZ, PK615BM6, PK615BMA, PK616BA, PK618BA, PK626BA, PK632BA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.