PA406EM MOSFET. Datasheet pdf. Equivalent
Type Designator: PA406EM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.8 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 54 pF
Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm
Package: SOT23
PA406EM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PA406EM Datasheet (PDF)
1.1. pa406em.pdf 
Size:763K _unikc
PA406EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 140mΩ @VGS = -10V -60V -2A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 TA = 25 ° C -2 ID Continuous Drain Current TA = 70 ° A C -1.5 IDM -7 Pulsed Drain Curr
Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .
