PA406EM Datasheet and Replacement
Type Designator: PA406EM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT23
PA406EM substitution
PA406EM Datasheet (PDF)
pa406em.pdf

PA406EMP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID140m @VGS = -10V-60V -2ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TA = 25 C-2IDContinuous Drain CurrentTA = 70 AC-1.5IDM-7Pulsed Drain Curr
Datasheet: PA110BL , PA110BV , PA203EMG , PA210BC , PA210BL , PA210HK , PA210HV , PA210HVA , AO3407 , PA410BD , PA502FMG , PA504EM , PA504EV , PA606BMG , PA606HAG , PA610AD , PA610ATF .
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