All MOSFET. PA406EM Datasheet

 

PA406EM MOSFET. Datasheet pdf. Equivalent


   Type Designator: PA406EM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23

 PA406EM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA406EM Datasheet (PDF)

 ..1. Size:763K  unikc
 pa406em.pdf

PA406EM PA406EM

PA406EMP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID140m @VGS = -10V-60V -2ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TA = 25 C-2IDContinuous Drain CurrentTA = 70 AC-1.5IDM-7Pulsed Drain Curr

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History: AP2625GY | PHX3N40E | AP2306AGEN | IXFK78N50P3

 

 
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