PA504EM Spec and Replacement
Type Designator: PA504EM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT23
PA504EM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PA504EM Specs
pa504em.pdf
PA504EM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150m @VGS = -10V -40V -1.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C -1.5 ID Continuous Drain Current TA = 70 A C -1.1 IDM -9 Pulsed Drain Current1 TA = 25 C 0.5 PD... See More ⇒
pa504ev.pdf
PA504EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150m @VGS = -10V -40V -2.7A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TA = 25 C -2.7 ID Continuous Drain Current2 TA = 70 C -2.1 A IDM -15 Pulsed Dra... See More ⇒
Detailed specifications: PA210BC , PA210BL , PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG , AOD4184A , PA504EV , PA606BMG , PA606HAG , PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV .
Keywords - PA504EM MOSFET specs
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