All MOSFET. PK5G6EA Datasheet

 

PK5G6EA Datasheet and Replacement


   Type Designator: PK5G6EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 87 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 659 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN5X6P
 

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PK5G6EA Datasheet (PDF)

 ..1. Size:818K  unikc
 pk5g6ea.pdf pdf_icon

PK5G6EA

PK5G6EAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.4m @VGS = 10V20V 87A100% UIS Tested100% Rg TestedPDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 12 VTC = 25 C87IDContinuous Drain Current4TC = 100 C

 ..2. Size:254K  niko-sem
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PK5G6EA

N-Channel Enhancement Mode PK5G6EANIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.4m 24V 87A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching

Datasheet: PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , IRFP460 , PB210BC , PB210BD , PB210BI , PB210BM , PB210BTF , PB210BV , PB210HV , PK510BA .

History: PK527BA

Keywords - PK5G6EA MOSFET datasheet

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