PK5G6EA Datasheet. Specs and Replacement

Type Designator: PK5G6EA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 87 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 659 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: PDFN5X6P

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PK5G6EA datasheet

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PK5G6EA

PK5G6EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.4m @VGS = 10V 20V 87A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 12 V TC = 25 C 87 ID Continuous Drain Current4 TC = 100 C ... See More ⇒

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PK5G6EA

N-Channel Enhancement Mode PK5G6EA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.4m 24V 87A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching ... See More ⇒

Detailed specifications: PA610NV, PB5A2BA, PB5G2JU, PE5A0DZ, PE5A1BA, PE5G6EA, PK5A1BA, PK5C8EA, IRF640, PB210BC, PB210BD, PB210BI, PB210BM, PB210BTF, PB210BV, PB210HV, PK510BA

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