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PK5G6EA Spec and Replacement


   Type Designator: PK5G6EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 87 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 659 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN5X6P

 PK5G6EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PK5G6EA Specs

 ..1. Size:818K  unikc
 pk5g6ea.pdf pdf_icon

PK5G6EA

PK5G6EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.4m @VGS = 10V 20V 87A 100% UIS Tested 100% Rg Tested PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 12 V TC = 25 C 87 ID Continuous Drain Current4 TC = 100 C ... See More ⇒

 ..2. Size:254K  niko-sem
 pk5g6ea.pdf pdf_icon

PK5G6EA

N-Channel Enhancement Mode PK5G6EA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.4m 24V 87A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching ... See More ⇒

Detailed specifications: PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA , PK5C8EA , IRF640 , PB210BC , PB210BD , PB210BI , PB210BM , PB210BTF , PB210BV , PB210HV , PK510BA .

Keywords - PK5G6EA MOSFET specs

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