All MOSFET. PB210BD Datasheet

 

PB210BD MOSFET. Datasheet pdf. Equivalent


   Type Designator: PB210BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 330 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO252

 PB210BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PB210BD Datasheet (PDF)

 ..1. Size:383K  unikc
 pb210bd.pdf

PB210BD PB210BD

PB210BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 10ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C10IDContinuous Drain CurrentTC = 100 C6AIDM40Pulsed Drain Current1IASAvalanche Current 18EA

 ..2. Size:906K  cn vbsemi
 pb210bd.pdf

PB210BD PB210BD

PB210BDwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

 8.1. Size:372K  unikc
 pb210btf.pdf

PB210BD PB210BD

PB210BTF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 230m @VGS = 10V 8ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C8IDContinuous Drain CurrentTC = 100 C5AIDM30Pulsed Drain Current1IASAvalanche Current 18E

 8.2. Size:456K  unikc
 pb210bv.pdf

PB210BD PB210BD

PB210BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 2.1ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100VVGSGate-Source Voltage 20TA = 25 C2.1IDContinuous Drain Current1TA = 70 C1.7AIDM17Pulsed Drain Curre

 8.3. Size:912K  unikc
 pb210bm.pdf

PB210BD PB210BD

PB210BMN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 1.3ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C1.3IDContinuous Drain CurrentTA = 100 C0.8AIDM18Pulsed Drain Current1IASAvalanche Current 1

 8.4. Size:484K  unikc
 pb210bi.pdf

PB210BD PB210BD

PB210BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 9ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C9IDContinuous Drain Current2TC = 100 C6AIDM14Pulsed Drain Current

 8.5. Size:474K  unikc
 pb210bc.pdf

PB210BD PB210BD

PB210BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID240m @VGS = 10V100V 2.2ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C2.2IDContinuous Drain CurrentTA = 100 C1.8AIDM8Pulsed Drain Current1IASAvalanche Current 6

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HM2302F

 

 
Back to Top