All MOSFET. PB544DU Datasheet

 

PB544DU MOSFET. Datasheet pdf. Equivalent

Type Designator: PB544DU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.3 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 34 nS

Drain-Source Capacitance (Cd): 135 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0135 Ohm

Package: PDFN2X3S

PB544DU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PB544DU Datasheet (PDF)

1.1. pb544du.pdf Size:193K _unikc

PB544DU
PB544DU

PB544DU N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 13.5mΩ @VGS = 10V 20V 10A PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V TA = 25 ° C 10 ID Continuous Drain Current TA = 70° C 8.2 A IDM 40 Pulsed Drain Curre

5.1. pb544ju.pdf Size:790K _unikc

PB544DU
PB544DU

PB544JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 8mΩ @VGS = 4.5V 20V 12.9A 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 TDFN 2X3-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±10 V TA = 25 ° C 12.9 ID Continuous Drain Current TA=

Datasheet: PK510BA , PK512BA , PK516BA , PK527BA , PK552DX , PK600BA , PK608BA , PK608DY , IRF730 , PB544JU , PB554DY , PB555BA , PB560DZ , PB600BA , PB606BA , PE504BA , PE506BA .

 


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