PB544DU
MOSFET. Datasheet pdf. Equivalent
Type Designator: PB544DU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.8
nC
trⓘ - Rise Time: 34
nS
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135
Ohm
Package: PDFN2X3S
PB544DU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PB544DU
Datasheet (PDF)
..1. Size:193K unikc
pb544du.pdf
PB544DUN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID13.5m @VGS = 10V20V 10APDFN 2X3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 8 VTA = 25 C10IDContinuous Drain CurrentTA = 70C8.2AIDM40Pulsed Drain Curre
9.1. Size:790K unikc
pb544ju.pdf
PB544JUDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID8m @VGS = 4.5V20V 12.9A1,2:S13:G14:G25,6:S27:D1/D2TDFN 2X3-6ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 10 VTA = 25 C12.9IDContinuous Drain CurrentTA=
9.2. Size:273K niko-sem
pb544ju.pdf
Dual N-Channel Enhancement Mode PB544JUNIKO-SEM TDFN 2x3-6 Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 8 m 12.9A 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 10 VT
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