PB560DZ PDF and Equivalents Search

 

PB560DZ Specs and Replacement

Type Designator: PB560DZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: PDFN2X3S

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PB560DZ datasheet

 ..1. Size:415K  unikc
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PB560DZ

PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 26m @VGS = 4.5V 20V 7.8A PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 V TA= 25 C 7.8 ID Continuous Drain Current TA = 70 C 6.2 A IDM 40 Pulsed Drain... See More ⇒

Detailed specifications: PK552DX, PK600BA, PK608BA, PK608DY, PB544DU, PB544JU, PB554DY, PB555BA, 2SK3878, PB600BA, PB606BA, PE504BA, PE506BA, PE507BA, PE521BA, PE526BA, PE528BA

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