All MOSFET. PB606BA Datasheet

 

PB606BA Datasheet and Replacement


   Type Designator: PB606BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN2X2S
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PB606BA Datasheet (PDF)

 ..1. Size:443K  unikc
 pb606ba.pdf pdf_icon

PB606BA

PB606BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V30V 7.8A100%RG TESTPDFN 2X2S 100%UIL TESTABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTA = 25 C7.8IDContinuous Drain CurrentTA= 70 C6.2A

 8.1. Size:238K  niko-sem
 pb606bx.pdf pdf_icon

PB606BA

PB606BXN-Channel Enhancement Mode NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 18m 7.3AGG : GATE D : DRAIN S : SOURCE S100% RG Test , 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Sourc

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History: MX2N4092 | TTB135N68A | HUFA76413D3 | SCH1345 | 2SJ532 | IRFI830A | WMB014N06LG4

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