All MOSFET. PE544JZ Datasheet

 

PE544JZ Datasheet and Replacement


   Type Designator: PE544JZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 39 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PDFN3X3S
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PE544JZ Datasheet (PDF)

 ..1. Size:851K  unikc
 pe544jz.pdf pdf_icon

PE544JZ

PE544JZDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID8.5m @VGS = 4.5V20V 39APDFN 3X3SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20VVGSGate-Source Voltage 8TC = 25 C39TC = 100 C24IDContinuous Drain Current2TA = 25 C12ATA

 ..2. Size:292K  niko-sem
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PE544JZ

Dual N-Channel Enhancement Mode PE544JZ NIKO-SEM PDFN 3x3S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 8.5m 20V 39A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Product

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KDS2572 | R6006JND3 | 1N70Z | AP30H80Q | 19N10L-TM3-T | 2SK804 | HMS10N60I

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