All MOSFET. PE601CA Datasheet

 

PE601CA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PE601CA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: PDFN3X3P

 PE601CA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PE601CA Datasheet (PDF)

 ..1. Size:1127K  unikc
 pe601ca.pdf

PE601CA PE601CA

PE601CAN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) IDChannel22m @VGS = 10V30V 20A N28m @VGS = -10V-30V -19A P100% UIS TestedPDFN 3X3P 100% Rg TestedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 30VDSDrain-Source Voltage VP -30N 20VGSGate-Source Voltage VP 2

 ..2. Size:532K  niko-sem
 pe601ca.pdf

PE601CA PE601CA

N- & P-Channel Enhancement Mode Field PE601CA NIKO-SEM PDFN 3x3P Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 30V 22m 20A P-Channel -30V 28m -19A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STW12NA60

 

 
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