All MOSFET. PE610SA Datasheet

 

PE610SA Datasheet and Replacement


   Type Designator: PE610SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 407 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PDFN3X3P
 

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PE610SA Datasheet (PDF)

 ..1. Size:889K  unikc
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PE610SA

PE610SAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3m @VGS = 10V30V 62APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C62TC = 100 C39IDContinuous Drain Current3TA = 25 C24ATA= 70

 ..2. Size:242K  niko-sem
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PE610SA

PE610SAN-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 3m 62A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switching Losses. Products In

Datasheet: PE537BA , PE544JZ , PE548BA , PE548EA , PE552BA , PE600BA , PE601CA , PE606BA , IRLB4132 , PE614DX , PE616BA , PE618BA , PE618DT , PE632BA , PE636BA , PE642DT , APM2318A .

History: NVMTS0D6N04C

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