All MOSFET. PE616BA Datasheet

 

PE616BA Datasheet and Replacement


   Type Designator: PE616BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 16.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFN3X3P
 

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PE616BA Datasheet (PDF)

 ..1. Size:429K  unikc
 pe616ba.pdf pdf_icon

PE616BA

PE616BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7m @VGS = 10V30V 36APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C36IDContinuous Drain CurrentTC = 100 C23IDM100Pulsed Drain Current1

 ..2. Size:323K  niko-sem
 pe616ba.pdf pdf_icon

PE616BA

PE616BA NIKO-SEM N-Channel Enhancement Mode PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 7m 36A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltag

Datasheet: PE548BA , PE548EA , PE552BA , PE600BA , PE601CA , PE606BA , PE610SA , PE614DX , IRFP250 , PE618BA , PE618DT , PE632BA , PE636BA , PE642DT , APM2318A , APM3055L , APM4008NG .

History: CS5M4905 | QH8KA1 | IRFU010 | SVGP157R5NT | P2003EVT | IPA60R280CFD7 | IXFH42N50P2

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