All MOSFET. PE632BA Datasheet

 

PE632BA Datasheet and Replacement


   Type Designator: PE632BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: PDFN3X3P
 

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PE632BA Datasheet (PDF)

 ..1. Size:456K  unikc
 pe632ba.pdf pdf_icon

PE632BA

PE632BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.5m @VGS = 10V30V 53APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTc = 25 C53Tc = 100 C33IDContinuous Drain Current2TA = 25 C15ATA= 70

 ..2. Size:390K  niko-sem
 pe632ba.pdf pdf_icon

PE632BA

N-Channel Enhancement Mode PE632BA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 4.5m 53A D D D DGG : GATE D : DRAIN S S : SOURCE #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Vol

Datasheet: PE600BA , PE601CA , PE606BA , PE610SA , PE614DX , PE616BA , PE618BA , PE618DT , IRFZ24N , PE636BA , PE642DT , APM2318A , APM3055L , APM4008NG , APM4008NU , APM4010NU , APM4012NU .

History: AP3987I | SSM3K43FS | P7006BL | IXTH15N45A | PMV28ENEA | PG1010BD | 2SK882

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