APM4427K MOSFET Datasheet: P-Ch, 30V, 4A. Full specification with pinout and replacement list

APM4427K Specs and Replacement

Type Designator: APM4427K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: SOP8

APM4427K substitution

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APM4427K datasheet

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APM4427K P-Channel Enhancement Mode MOSFET Features Pin Description D D D -30V/-4A, D RDS(ON) = 85m (typ.) @ VGS = -10V RDS(ON) = 140m (typ.) @ VGS = -4.5V S S Reliable and Rugged S G SOP-8 Package Top View of SOP 8 Lead Free and Green Devices Available (RoHS Compliant) S S S Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powe... See More ⇒

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APM4420 N-Channel Enhancement Mode MOSFET Features Pin Description S 1 8 D 30V/12.5A, RDS(ON)=6m (typ.) @ VGS=10V RDS(ON)=10m (typ.) @ VGS=4.5V S 2 7 D Super High Dense Cell Design for S 3 6 D Extremely Low RDS(ON) G 45 D Reliable and Rugged SO-8 Package SO - 8 D Applications Power Management i... See More ⇒

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APM4429 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-13A, RDS(ON) = 8m (typ.) @ VGS = -20V S 1 8 D RDS(ON) = 9m (typ.) @ VGS = -10V S 2 7 D RDS(ON) =13m (typ.) @ VGS = -4.5V S 3 6 D Super High Density Cell Design G 45 D Reliable and Rugged SO - 8 SO-8 Package S S S Applications ... See More ⇒